国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 FEI L（2）
公开年 2015（2）
申请年 2014（2） 
专利权人 HARBIN INST TECHNOLOGY（2）

Preparation of high-quality graphene involves taking concentrated sulfuric acid and natural graphite, uniformly mixing, adding potassium permanganate, reacting, heating, adding potassium permanganate, reacting, hydrolyzing, and drying.

FEI L, HUANG X, WEN G, ZHONG B

Preparation of silicon carbide/graphene core-shell structure nanomaterial for integrated circuit and electronic device involves heating silicon carbide, soaking into hydrogen fluoride solution, repeatedly washing, filtering, and drying.

FEI L, HUANG X, WEN G, XIA L, YAN X, ZHANG X