国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/10（2） H01L029/78（2）
发明人 GE C（2）
公开年 2021（2）
申请年 2020（2）
专利权人

Three-terminal device for simulating biological nerve synapses, has ferroelectric layer placed below electrode, channel layer arranged below ferroelectric layer, and another electrode placed on side of channel layer.

GE C, SUN Q, JIN K

High-threshold power semiconductor device has heavily doped semiconductor layer provided on surface of channel layer in cell region, on which source metal electrode is provided, terminal region in which channel layer is extended and wrapped.

SUN W, ZHANG C, XIN S, LI S, QIAN L, GE C, LIU S, SHI L