国家/地区 韩国（3）
IPC部 C（3） B（2）
IPC大类 C01（3） B01（2）
IPC小类 C01B（3） B01J（2）
IPC B01J019/12（2） C01B031/02（2）
发明人 GON S J（3）
公开年
申请年 2012（2） 
专利权人 KOREA INST S.（3）

Manufacture of three-dimensional graphene used for manufacturing of reduced graphene, involves providing core-shell composite in which core is surrounded by graphene or graphene derivative as shell material, and etching.

GON S J, LEE S S, JANG Y L, KIM H, JONG H P, BAE W K

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S