国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 GRILL A（2）
公开年 2014（2）
申请年 2014（2）
专利权人 INT BUSINESS.（2）

Device structure e.g. graphene device structure has spaced apart contact with portion on metal layer and insulating substrate, first patterned carbon-based nanostructure layer with regions are not covered by first patterned metal layer.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J, PFEIFFER D, SAENGER K L, WISNIEFF R L

Method for forming interconnect structure for integrated microelectronic circuit, involves forming graphene cap directly on uppermost surface of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D