国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/16（2）
发明人 GRILL A（2）
公开年
申请年 2016（2）
专利权人

Method for forming e.g. graphene device structure, involves heating layer of material on patterned metal and removing un-reacted patterned metal to expose patterned carbon-based nanostructure layer between source region and drain region.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J, PFEIFFER D, SAENGER K L, WISNIEFF R L

Semiconductor structure used for semiconductor devices, has graphene layer with number of graphene monolayers and abutting semiconductor carbide layer and with crystalline orientation along surface normal of top surface of substrate.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C