国家/地区 美国（2）
IPC部 B（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC B32B009/00（2）
发明人 GRILL A（2）
公开年 2011（2）
申请年
专利权人 INT BUSINESS.（2）

Method for forming graphene layer e.g. few-layer graphene, for high frequency low-noise amplifier for communication application, involves using carbon in layer to pass via another layer to upper surface and forming graphene layer on surface.

BOL A A, CARRUTHERS R A, CHU J O, GRILL A, LAVOIE C, SAENGER K L, TSANG J C

Forming a graphene layer including at least one graphene monolayer comprises forming a semiconductor-carbon alloy layer on a semiconductor substrate, and converting the semiconductor-carbon alloy layer into a semiconductor carbide layer.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C