国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 GUO T（3）
公开年 2013（3）
申请年 2012（2） 
专利权人 UNIV FUZHOU（3）

Quantum dot doped organic resistance variable memory based graphene preparing method, involves forming organic functional layer, dielectric layer on substrate to form bottom electrode, and arranging device layer on another substrate.

CHEN W, WU X, LI F, HU X, GUO T, KOU L, WU C

Graphene quantum dot layer organic photovoltaic device, has organic photovoltaic device structure provided with substrate, anode, anode buffer layer, organic active layer system and cathode decorating layer.

XU S, LI F, WU C, ZHANG Y, CHEN W, GUO T, KOU L

Preparation of graphene quantum dot used for photoelectric material and device, by adding carbon nanotube in mixed solution of nitric acid and sulfuric acid, and carrying out dialysis and ultrafiltration centrifugation.

GUO T, KOU L, HU X, WU X, CHEN W, LI F, WU C