国家/地区
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 HAQUE S M（2）
公开年
申请年 2015（2）
专利权人 NOKIA TECHNO.（2）

Apparatus for enabling transfer of e.g. graphene, in thin film transistor, has layer comprising first coefficient of thermal expansion, where first coefficient of thermal expansion is different to second coefficient of thermal expansion.

HAQUE S, BOWER C, COTTON D, HAQUE S M

Graphene device, has substrate placed at flexible, stretchable and transparent layer, and porous graphene layer including set of pores, where porous graphene layer includes graphene ribbon and additional graphene ribbon.

KARKKAINEN A M, HAQUE S M, COLLI A, PASANEN P M, KARKKAINEN L M, UUSITALO M A, LEHTINIEMI R K