国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 HU P（2）
公开年 2012（2）
申请年 2012（2）
专利权人 HARBIN INST .（2）

Preparation of graphene film for gas sensor involves applying graphene oxide suspension on silicon wafer with oxide film, cleaning and drying, and then spin-coating using polymethyl(meth)acrylate, heating and plasma-etching.

HU P, LI J, LI X, WANG X, WEN Z, WANG L, ZHANG R, ZHANG J

Manufacture of graphene film involves providing metal sheet in container filled with glacial acetic acid, heating, washing, drying, placing sheet and carbon source in vacuum furnace, heating, etching, washing and drying.

HU P, LI J, LI X, WANG X, WEN Z, WANG L, ZHANG R, ZHANG J