国家/地区 中国（3）
IPC部 C（3）
IPC大类 C09（2）
IPC小类 C09K（2）
IPC
发明人 JIANG H（4）
公开年 2013（4）
申请年 2013（2） 
专利权人

Graphene-reinforced-type indium gallium arsenide infrared detector, has indium gallium arsenide absorption layer formed on substrate, pin photo detector structure formed by expanding of buffer layer, which is provided with graphene layer.

CHEN Y, JIANG H, LI D, LI Z, MIU G, SONG H, SUN X, ZHANG Z

Cadmium selenide quantum dots loaded graphene for solar battery device and photocatalysis comprises rich nitrogen structure and surface loaded cadmium selenide quantum dots, and graphene from graphite oxide.

JIANG H, MAO B

Composite hydrogel useful in e.g. microfluidic device, lens structure and micromechanical systems, comprises graphene oxide flakes distributed in and covalently bonded to a thermo-responsive hydrogel polymer i.e. poly isopropylacrylamide.

JIANG H, LO C, ZHU D

Acid-base bifunctional graphene-based nano heterogeneous catalyst comprises catalyst graphene oxide as carrier and amino group as surface modifier of graphene oxide.

JIANG H, ZHANG F, LIANG C, SHEN J