国家/地区 韩国（2） 美国（2）
IPC部 G（2） H（2）
IPC大类 G02（2） H01（2）
IPC小类 G02F（2） H01L（2）
IPC G02F001/01（2） G02F001/19（2）
发明人 KANG J（3）
公开年
申请年
专利权人 SAMSUNG ELECTRONICS CO LTD（3）

Multi-stack graphene structure used in beam steering device, has graphene stack which is comprised of graphene layers made of amorphous graphene, and electric field former that is configured to apply electric field to graphene layers.

JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S

Multi-stack graphene structure, has graphene layers and thin dielectric layers stacked on one another, where graphene layers comprise amorphous graphene, and electric field applying electric field to graphene layers.

JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S, JOO W J, KANG J H, KIM S J

Semiconductor memory device e.g. three-dimensional nonvolatile memory device in personal digital assistants (PDA), has oxide semiconductor pattern which is connected to graphene layer through gate electrodes.

KIM T S, KANG J, OH K, JANG T S