国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人 KAWABATA A（2）
公开年
申请年
专利权人 FUJITSU LTD（2）

Electronic device e.g. metal oxide-Semiconductor field effect transistor, consists of graphene and carbon nanotube which are electrically connected through catalyst metal.

KAWABATA A

Manufacture of carbon nanotube used as semiconductor, involves supplying carbon raw material to metal catalyst having atomic arrangement of triangular lattice, and depositing graphene sheet of six membered ring structure.

AWANO Y, NARUTSUKA S, KAWABATA A, MARUYAMA T, NARIZUKA S, NARITSUKA S