国家/地区 韩国（3）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2）
发明人 KIM B J（3）
公开年 2017（2）
申请年 2015（3）
专利权人 UNIV SUNGKYU.（2）

Graphene comprises spherical graphite particle as raw material and undergoing acidification to manufacture graphite intercalation compound.

AN J C, HONG I P, KIM B J, KIM H J, KIM Y J, LEE E J, PARK S M, YOU S J

Highly efficient and low voltage graphene-organic semiconductor vertical transistor, has gate electrode separated on flexible substrate, and insulator layer formed between gate electrode and organic semiconductor channel region.

CHO J H, KANG M S, KIM B J

Doping method of graphene used for forming channel layer in transistor, involves contacting graphene to rubber lens modified by chemical functional group.

CHO J H, CHOI Y, HWANG E, KIM B J, LEE Y