国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 KIM D（2）
公开年 2009（2）
申请年
专利权人 SAMSUNG ELEC.（2）

Stack structure useful in electronic device comprises silicon substrate, under layer formed on the silicon substrate, epitaxial graphene layer formed on under layer, nickel layer and copper layer between silicon substrate and nickel layer.

CHUNG H, JEON D, KIM D, SEO S, WOO Y, CHUNG H J, JEON D Y, KIM D C, SEO S A, WOO Y S

Electromechanical switch has elastic conductive layer made of several layers of graphene, which is bent by application of electric field.

CHUNG H, JUNG R, KIM D, LEE C, SEO S, CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A