国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01G（2）
IPC H01G011/36（2） H01G011/38（2） H01G011/86（2）
发明人 KIM H（3）
公开年 2014（2）
申请年 2014（2） 
专利权人 DO I（2） DO IN H（2） KIM H（2）

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Composition, useful in an electrochemical capacitor, comprises a combination of a high surface area nanosized graphite comprising nanosized graphene nanotubes and nanosized graphene nanoplatelets, and carbon.

DO I, KIM H, DO IN H

Electrochemical double layer capacitor comprises electrolyte, separator and aluminum mesh current collectors having deposits of nanosized graphite chosen from nanosized graphene nanotube.

DO I, KIM H, DO IN H