国家/地区 韩国（2） 美国（2）
IPC部 G（2）
IPC大类 G03（2）
IPC小类 G03F（2）
IPC G03F001/22（2） G03F001/62（2） G03F001/64（2）
G03F007/20（2）
发明人 KIM H K（2）
公开年 2022（2）
申请年 2022（2） 
专利权人 KOREA ELECTR.（2）

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Pellicle i.e. consumable component for protecting mask from contaminants in lithography process for semiconductor or display manufacturing, has substrate whose central portion is formed with opening, and pellicle layer containing amorphous carbon and core layer, formed on support layer.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K, JEONJUNHYUCK, LEE S M