国家/地区 韩国（4）
IPC部 C（3） H（3）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01B（2） H01L（2）
IPC C01B031/02（2）
发明人 KIM H S（4）
公开年 2015（4）
申请年 2013（3） 
专利权人 KOREA INST S.（2）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Surface modification of titanium using graphene used in e.g. osseointegration implant for promoting bone regeneration, involves reducing oxidized graphene-titanium using hydrazine, and carrying out electrodeposition process.

HAHN S K, LEE C S, JUNG H S, KIM H S, OH S H, YUH J H, CHOI Y J, JEONG J W, LEE B G, CHA H J, CHO D W

Manufacture of graphene-zinc oxide complex used in manufacture of piezoelectric element, involves dispersing graphene in solvent, seeding by adding zinc oxide precursor, adding e.g. tetramine, and growing zinc oxide on graphene.

KIM S Y, KIM H S, YANG C M, YU J, JUNG Y C, LEE H S

Conducting compound for flexible electric component, has main portion that is comprised with polymer infiltrated within pore of reduction graphene oxide board structure.

KIM T A, LEE S S, PARK M, KIM H S, PYO J B, LIM S H, SON J G