国家/地区 韩国（2） 美国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 KIM I（2）
公开年
申请年
专利权人 KOREA INST SCI TECHNOLOGY（2）

Flash memory device for use in neuromorphic computing system, has blocking insulating layer that is arranged on floating gate and has second dielectric constant greater than first and upper gate that is disposed on blocking insulation layer.

KWAK J, PARK E P, LEE S Y, KIM I H, PARK J K, KIM J, KIL P J, JUNG Y J, JEONG Y, PARK J, KIM I, LEE S, PARK E, KWAK J Y

Manufacturing method of electrode for hydrogen production, involves increasing activity of tungsten carbide nanoflake to hydrogen evolution reaction by removing oxide layer or graphene layer from surface of tungsten carbide nanoflake.

LEE W S, KO Y, BAIK Y J, PARK J, LEE K S, KIM I, JEONG D S, KO Y J, PARK J K