国家/地区 韩国（4） 中国（2） 美国（2）
IPC部 B（3） H（3）
IPC大类 H01（3） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC B82Y099/00（2）
发明人 KIM J S（4）
公开年 2013（2）
申请年 2013（4）
专利权人 POSCO（2） SAMSUNG ELEC.（2）

Separation of graphene oxide involves centrifuging for predetermined period by satisfying specific relation, and separating graphene oxide after each centrifugation process.

YOO H J, JUNG Y G, BYEON C S, KIM J S

Counter electrode for dye sensitized solar cell, comprises graphene coating layer and phosphate coating layer, where lower plate is coated with phosphate coating layer.

KIM K B, BAEK J H, LEE J R, KIM M J, KIM J S, PARK Y J

UV light-emitting diode comprises n-type semiconductor layer, active layer on n-type semiconductor layer, p-type semiconductor layer of aluminum gallium nitride on active layer, and p-type graphene layer on p-type semiconductor layer.

HWANG S, KO G, SIM S, KIM J, CHUNG H, SONE C, HYEON S S, JAE J H, SEOP K J, SU S C, WON H S, U KOH G, JEONG H, KO K, SHIM S, SON C, HWANG S W, KO G W, SIM S H, KIM J S, CHUNG H J, SONE C S

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R