国家/地区 韩国（3）
IPC部 G（2）
IPC大类 G03（2）
IPC小类 G03F（2）
IPC G03F001/62（2）
发明人 KIM K S（3）
公开年 2023（3）
申请年 2022（2） 
专利权人

Composite active material for forming anode, comprises core comprising silicon-containing structure and/or silicon-containing compound, and shell comprising carbonaceous material, and at least one metal oxide arranged in matrix of carbonaceous material, arranged on and conformed to surface of core.

SHIM K, MAH S, SON I, JO S, KIM G, PARK J, KAPYLOU A, LEE J, EUN S K, MAH S K, JO S N, KIM G S, WAN L J, SHIM K E, MA X G, SON I H, KIM K S, PARK J H, LEE J W, LI J, PARK S, JIN G, ZHAO S, MA X

Method for manufacturing pellicle for extreme UV lithography, involves adjusting thickness of etch stop layer and another etch-stop layer.

YU L, KIMCHUNG, CHO S J, CHOI J H, KIM K S, LEE S Y, SEO K, MOON S Y, KIM J K

Method for manufacturing pellicle, involves forming upper silicon nitride layer on upper surface of wafer substrate, where pattern is formed on lower silicon n-nitride layer, and metal layer is formed in lower silicon nitride layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M