国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/16（2）
发明人 KIM M（2）
公开年 2016（2）
申请年 2016（2） 
专利权人 UNIV SEOUL N.（2）

Method for manufacturing electronic component, involves forming carrier layer on graphene layer, transferring graphene layer on substrate, and removing catalyst metal layer from lower-side of graphene layer.

KIM K, KIM M, KIM K B, KIM K J, KIM M S

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S