国家/地区 韩国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 KIM S（2）
公开年 2014（2）
申请年 2012（2）
专利权人

Proton generating target for use in ion beam treatment apparatus, has graphene layer surrounding another graphene layer, where proton is generated from liquid state hydrogen droplet and incoming laser beam is fixed on latter graphene layer.

JUNG M Y, SHIN D H, KIM S

Semiconductor device has highly resistive layer that is formed in boundary face of graphene, and electrodes that are formed respectively on substrate and arranged at lower portion of respective graphene.

CHOI S H, KIM S, SHIN D H