国家/地区 韩国（3） 美国（2）
IPC部 B（2） C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L029/16（2） H01L029/786（2）
发明人 KIM S Y（3）
公开年 2017（3）
申请年 2016（2） 
专利权人

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Multilayered nanofilm useful in drug delivery system, comprises multiple graphene thin films containing at least one drug.

HONG J K, KIM S Y