国家/地区 韩国（3）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC
发明人 KIM T H（3）
公开年
申请年 2018（3）
专利权人

Composition used for forming hardmask layer for forming photoresist pattern for manufacturing semiconductor, comprises solvent and graphene derivative including at least one anhydride group at graphene terminal.

KIM T H

Metal heat sink comprises a substrate, multiple metal plates positioned on the substrate and deposited by metal of the same material, and graphene inserted between the metal plate.

KIM K, KWANGJIN O, YEOM G Y, KIM T H, LEE S J

Catalyst-free electroless plating of e.g. graphene, involves introducing composition containing nickel, iron, cobalt and/or copper precursor, to solution containing to-be-plated component, to set preset metal precursor concentration.

KIM T H, LEE S B, JUNG B M, LEE K B