国家/地区 韩国（3）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 KIM Y J（3）
公开年 2017（3）
申请年
专利权人

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y

Preparation of graphene oxide dispersion for e.g. sensor, involves mixing polar aprotic solvent and graphite, separating graphite with polar solvents, chemically oxidizing and peeling pretreated graphite and mixing dispersion medium.

KIM Y J

Graphene comprises spherical graphite particle as raw material and undergoing acidification to manufacture graphite intercalation compound.

AN J C, HONG I P, KIM B J, KIM H J, KIM Y J, LEE E J, PARK S M, YOU S J