国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L023/532（2）
发明人 KITAMURA M（2）
公开年 2015（2）
申请年
专利权人 TOSHIBA KK（2）

Semiconductor device has insulation film that is formed on graphene interconnect, and via conducting portion that is formed in via hole that is provided in interconnect and insulation film.

KITAMURA M, SAKATA A, MIYAZAKI H, KAJITA A, SAKAI T

Semiconductor device for large scale integrated circuit (LSI), has graphene wires that are provided within each catalyst film formed in trenches of wire layer.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T