国家/地区 中国（2）
IPC部 B（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC H01L029/16（2）
发明人 KONDO D（2）
公开年
申请年 2009（2） 
专利权人 FUJITSU LTD（2）

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T