国家/地区 世界知识产权组织（4）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 KONG W（4）
公开年
申请年 2019（2） 
专利权人 MASSACHUSETT.（3）

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Manufacture of semiconductor device for electronic device, involves forming carbon buffer layer on substrate, and graphene layer on buffer layer, removing graphene layer, exposing carbon buffer layer, and forming fabrication platform.

KIM J, KONG W

Method for growing silicon carbide layer used in electronic/photonic device, involves forming silicon carbide film on layer comprising graphene and/or hexagonal boron nitride, formed on substrate, in presence of inert gas-based material.

MYERSWARD R L, KIM J, QIAO K, KONG W, GASKILL D K, MAEKAWA T, MASAGO N

Transferring graphene for graphene based flexible electronics application involves forming chemical vapor deposition-grown graphene on copper, transferring graphene to target substrate and delaminating thin film-graphene from substrate.

CHENG C, CHANDRASHEKAR B N, WANG J, SHI R, ZHANG L, LIU S, OUYANG W, ZHANG Y, KONG W, HU M