国家/地区 中国（4）
IPC部 B（3） C（2） H（2）
IPC大类 B82（2） C01（2） H01（2）
IPC小类 B82Y（2） C01B（2）
IPC
发明人 LEE P（4）
公开年
申请年 2012（2） 
专利权人

Anode material for anode electrode, has multilayer graphene as carrier, nano-silicon as core adsorbed on multilayer graphene, silicon suboxide and amorphous carbon layer coated on multilayer graphene and on nanosilicon, and buffering holes.

LEE P, WENG B, GEE C, CHEN B, LI B, GE C

Lateral-type semiconductor light emitting device for lightning device e.g. lamp used in indoor and outdoor places, has nano-texture that is extended from top surface of graphene layer and contacted with semiconductor layer.

CHOI J H, LEE B Y, SONG K Y, CHOI R J, CHOI R, SONG J, CUI L, LEE P, CHOI R J C, CHOI J

Vertically growing graphene on the substrate by vapor deposition method, comprises placing catalytic metal layer deposited substrate in chemical vapor deposition reaction furnace, heating, and placing substrate in presence of electric field.

LIU X, LEE P, CHEN J

Reverse osmosis membrane, has microporous support layer and polyamide-based active layer, which is formed on microporous support layer and comprises graphene containing compound.

LEE P, SHIN C, YOO J, JEONG S, LEE Y, SHIN C K, YOO J E, JEONG S P, LEE Y J, WOO J, JUNG S