国家/地区 韩国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LEE T（2）
公开年 2021（2）
申请年 2019（2）
专利权人

Manufacturing nano pore filter comprises forming crystal defect including nanopores and functional groups of target density by subjecting two-dimensional material to physical etching process, and utilizing chemical etching process.

LEE T, IM Y, KANG M H, NA J

Manufacture of semiconductor substrate structure involves preparing intermediate structure by forming graphene layer on diamond wafer substrate, forming hexagonal-boron nitride layer on structure and forming gallium nitride epilayer.

LEE T, CHO S