国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LEI T（2）
公开年 2012（2）
申请年 2011（2）
专利权人 UNIV XIDIAN（2）

Method for growing wafer-level epitaxial graphene on silicon carbide surface involves placing cleaned carbon source in furnace cavity filled with hydrogen, heating, removing oxides on substrate and processing in furnace filled with argon.

LEI J, LEI T, TANG X, WANG D, WANG H, WANG Y, ZHANG Y

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H