国家/地区 中国（3）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LI K（3）
公开年 2011（2）
申请年 2010（3）
专利权人 CHONGQING QI.（2）

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Graphene used as field emitting cathode material of electro luminance light source e.g. graphene cold cathode fluorescent tube, is separate graphene material with negative electronic affinity.

LI K

Fractal graphene material with negative electron affinity, e.g. for field emission display comprises single layer and multiplayer fractal graphene structures growing alternately, which is deposited on substrate.

LI K