国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 LI X（2）
公开年
申请年 2021（2） 
专利权人

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X