国家/地区 台湾（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 LIANG J（2）
公开年
申请年
专利权人

Package structure used in high-frequency and high-speed fields, comprises substrate, connection pad disposed on substrate, conductive part disposed on connection pad and electrically connected to substrate, and insulating protective layer.

LIN K, LIANG J, LIN C

Manufacture of oxide semiconductor composition used in manufacture of oxide thin-film transistor, involves mixing graphene, metal oxide precursor, and solvent, and preparing metal oxide solution, in which graphene remains dispersed.

LIANG J J, LIAN J T, WU H Y, FU H M, RYO K, HSIEH C, LIAN J, WU H, FU H, LIANG J, HSIEH C S