国家/地区 韩国（3）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 LIM H（3）
公开年 2020（2）
申请年 2018（3）
专利权人

Producing activated carbon comprises preparing graphene oxide by chemical exfoliation process using carbon source and acid, separating graphene oxide and residual carbon source, heating residual carbon source and maintaining temperature.

CHUN D, KIM S, KIM H W, LIM H, RUDLY C, LEESIHYUN, CHOI H K, YOO J, LIM J, RHIM Y

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Pipeline module for ultra-high purity gas storage, has smaller receiving space than first gas storage tank while maintaining ultrapure state having concentration of gaseous state and graphene coating layer is coated on surface of pipeline.

LIM H, HYUNG J, CHAE H, HONG E, CHA D, CHOI Y, LEE Y, JEONG U, SEO W, PARK M, HYEOCK L M, JUNG E, SUNG K J, JEON H, JANG I, LEE S J, KIM D, KIM S K, SONG J, LEE W J, CHOI S K, KO M, YONG L, KIM J H, CHOI Y S