国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 LIM H（2）
公开年
申请年
专利权人

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Flexible supercapacitor comprises electrolyte sandwiched between nickel foams electrodeposited with nanocomposite which contains conducting polymer, graphene oxide, and metal oxide.

LIM H N, CHEE W K, NG C H, HUANG N M, HUANG Q, XU W, LIM H