国家/地区 中国（3）
IPC部 G（2）
IPC大类 G01（2）
IPC小类
IPC
发明人 LIN M（4）
公开年 2017（2） 2018（2）
申请年 2017（4）
专利权人

Method for forming e.g. transistor, involves performing anneal process, removing metal layer after performing anneal process, and etching graphene to define channel from graphene, where carbon layer is transformed into graphene.

LIN M, LIN S, LEE S

Preparation of oxide quantum dot modified graphene/titanium oxide photocatalytic material, involves adding graphite in anhydrous ethanol, and ultrasonically dispersing to obtain graphene dispersion liquid, and taking conductive polymer.

CHEN C, CHEN W, XIAOYAN L, XIAN Z, JINCHENG F, MEI W, LIN M

Determining order of stacking of graphene samples containing single layer of graphene comprises e.g. measuring Raman G-mode intensities of single-layer graphene and graphene samples and determining single graphene region in graphene sample.

TAN P, LIN M, LIU X

Electrodeposition coating for high voltage cable, comprises graphene and heavy metal nanoparticle selected from silver nanoparticles, and/or gold nanoparticles.

CAI R, YE J, WANG C, JIAN X, WANG Q, HUANG H, XIE Z, CHEN G, LIN M, PENG J, SONG H