国家/地区 中国（2） 台湾（2） 美国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 LIN T（3）
公开年 2017（3）
申请年 2016（3）
专利权人

Fabrication method for casting graphene quantum dot on nitride semiconductor LED, involves casting graphene quantum dot solution on LED, and standing still for evaporating ethanol, and forming graphene-quantum-dot-cast layer on LED surface.

SHEN J, LIN T, SHEN Z, LIN Z

Semiconductor device for electronic application e.g. personal computer, has first insulating layer that is formed over first portion of first graphene layer.

YANG T, BAO T, LIN T, CHU W, YANG D, ZHU W

Mechanochemical force method for preparing graphene-silicon oxygen carbon cathode material involves utilizing expanded graphite and silicon-containing biomass as raw material and phosphoric acid as catalyst, and extruding expanded graphite.

LIN T