国家/地区 中国（2）
IPC部 G（2）
IPC大类 G03（2）
IPC小类 G03F（2）
IPC G03F007/20（2）
发明人 LUAN H（2）
公开年 2022（2）
申请年 2022（2） 
专利权人 CHEN X（2）

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Double-beam lithography method of graphene-over diffraction limit, involves using double-beam laser lithography system of annular reduction beam and spherical oxidation beam to photo-etch oxidation graphene film.

GU M, ZHANG Q, LUAN H, CHEN X