国家/地区 中国（3）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 MA D（3）
公开年 2017（3）
申请年 2016（2） 
专利权人

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Energy transmitting unit, has middle heat insulation layer formed in outer side of contacting outer graphene layer, where contacting outer graphene layer is formed between opening and closing of heat transfer connecting mechanism.

TANG Y, YU H, ZHANG M, MA D, YU J

Large area non-destructive transfer of graphene film comprises e.g. roll bonding graphene surface of graphene-grown copper foil with temporary substrate, and then contacting composite of graphene-temporary substrate with target substrate.

WANG Z, MA D, LI Q, LI H