国家/地区 台湾（4）
IPC部 G（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/06（2） H01L029/10（2）
H01L029/12（2） H01L029/16（2） H01L029/24（2）
H01L029/423（2） H01L029/66（2） H01L029/78（2）
H01L029/786（2）
发明人 MA H（4）
公开年 2021（2） 2022（2）
申请年 2021（3） 
专利权人 TAIWAN SEMIC.（2） TEAM GROUP I.（2）

Graphene sticker for use in electronic device, has graphene layer including opposite first side and second side, where first side contacts and completely covers back side of printable layer, and adhesive layer placed on second side of layer.

CHEN K T, MA H, CHUANG T H, CHANG J

External solid-state hard disk, has solid state hard disk box that contacts graphene heat-dissipating fin, so that heat energy generated by solid state disk case is sequentially transmitted through heat conducting sheet and graphene heat sink.

CHEN K T, TSAI H, MA H, CHANG J

Method for forming semiconductor device, involves configuring gate structure, source and drain components, semiconductor structure and two-dimensional material layer, and utilizing semiconductor structure and two-dimensional material layer as channels between source and drain components.

SHEN Z, KHADERBAD M A, MA H, SATHAIYA D M, ABHIJITH K M, SHEN T, DHANYAKUMAR S M

Semiconductor device comprises gate structure above channel element comprising channel layer containing silicon, germanium or semiconductor elements, and channel layer containing two-dimensional material.

KHADERBAD M A, MA H, LIN G, SHEN Z, SATHAIYA D M, LIN K, SHEN T, KARDERBARTMURUNALAPJIT, SATAYYADANYAKUMAHAVIER, SENSORMIN, DHANYKUMAR S M