国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/027（2） H01L021/306（2） H01L021/3213（2）
H01L021/768（2）
发明人 NAIK M（2）
公开年
申请年
专利权人 APPLIED MATE.（2）

Method for forming interconnect structure involves etching lithographic patterning structure to form partially patterned structure having first conductive lines and to expose top surface of first etch stop layer, etching first etch stop layer of patterned structure, and forming self-aligned via.

NAIK M, HWANG H D, LANG C, REN H, LU C, JIANG H

Forming interconnect structure, comprises e.g. etching patterned interconnect stack and first etch stop layer to form first conductive lines and second conductive lines and expose top surface of first etch stop layer and barrier layer.

JIANG H, LU C, REN H, LANG C, HWANG H D, NAIK M