国家/地区 韩国（2）
IPC部 G（2）
IPC大类 G03（2）
IPC小类 G03F（2）
IPC G03F001/62（2）
发明人 NAM K S（2）
公开年
申请年 2019（2）
专利权人 S S TECH CO.（2）

Pellicle attached to a photomask used in an EUV lithography process for use in preventing cracking and destruction of a thin film, comprises a core layer, and a support layer pattern that supports the pellicle portion from a lower portion.

NAM K S, LEE C, HONG J H, KIM J

Pellicle used for extreme UV-lithography, comprises two-layer film containing graphene, silicon, silicon and silicon nitride, silicon and silicon carbide, silicon and molybdenum silicon, and has preset transmittance, and thickness.

NAM K S, LEE C, HONG J H, YUN J W