国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01S（2）
IPC
发明人 PAN J（2）
公开年 2015（2）
申请年 2014（2）
专利权人 INST SEMICON.（2）

Distribute feedback type silicon base mixed laser graphene manufacturing method, involves carrying SOI piece manufacturing process according to graphite rare light selective process, and fixing metal surface with buried ridge structure.

KAN Q, PAN J, WANG X, YUAN L, REN Z

Graphene bonding saturated absorbing body mode-locked laser, has epitaxial piece whose middle part is located in transverse injection region, and window connected with ridge silicon waveguide and front and back metal electrodes.

KAN Q, PAN J, WANG X, YUAN L, REN Z