国家/地区 中国（8）
IPC部 C（4） B（2） G（2）
H（2）
IPC大类 B01（2） H01（2）
IPC小类
IPC
发明人 PANG W（8）
公开年 2018（8）
申请年 2018（6）  2017（2） 
专利权人 FOSHAN XIHUA.（3） UNIV BEIJING.（2）

Monocrystalline quartz crucible has main body composed of silicon dioxide layer and anti-oxidation layer, graphene heat conducting plate, side socket, liquid guide opening, single crystal silicon substrate, spline ring, and upper cover.

PANG W

Preparing photocatalyst material comprises magnetically stirring zinc oxide sol, graphene oxide- and tungsten trioxide-solution, adding polydiallyldimethylammonium chloride aqueous solution containing platinum cobalt alloy and centrifuging.

HE J, PANG W

Method for preparing graphene/polypropylene non-woven fabric filter for use in air filtration, involves modifying graphene surface, preparing graphene/polypropylene resin composite master batch and oxidizing graphene into de-ionized water.

WANG S, LA J, PANG W

Graphene material purity testing device, has base installed on carbon-sulfur analyzer main body, and operation cover whose sides are fixed with arm operation inlet that is located at side of elbow guard, where guard is fixed with glove.

HE J, PANG W

Conductive coating contains magnesium borate whisker, polythiophene, ferrosoferric oxide magnetic nanoparticles, graphene oxide, acrylic polyurethane, polyanionic cellulose, microcrystalline cellulose, polyepoxyethane, and isopropanol.

HE J, PANG W

Urea and graphene containing product, comprises urea, graphene, water, dispersing agent and emulsifier.

LIANG F, LIU R, CHEN G, GU C, WANG P, YUAN H, YANG X, GUO C, PANG W, SONG R

Graphene-based metamaterial terahertz grating device for e.g. terahertz imaging system, has ion gel gate dielectric layer formed on source electrode and drain electrode, and top gate fixed in upper edge position of dielectric layer.

YAN H, SHI K, ZHANG Y, TONG W, PANG W, SONG X, ZHANG M

Preparation of two-dimensional planar heterojunction enhanced field effect transistor involves depositing titanium/gold electrode on graphene on both sides of heterojunction layer by electron beam evaporation.

ZHANG Y, CHEN Y, YAN H, LIU B, DENG W, YOU C, LI J, YANG Y, SHEN G, WANG G, PANG W, AN B