国家/地区 韩国（4） 美国（4）
IPC部 C（4） B（3） H（3）
IPC大类 C01（3） H01（3） B82（2）
IPC小类 C01B（3） H01L（3）
IPC C01B031/04（3） H01L051/00（2）
发明人 PARK J（5）
公开年 2016（4）
申请年 2015（5）
专利权人 UNIV SUNGKYU.（3） GRAPHENEALL .（2）

Manufacture of electronic device for e.g. smartphone, involves forming graphene oxide on support substrate and then forming sacrificial layer, forming base substrate on sacrificial layer, and coating solvent on sacrificial layer.

HAN T, PARK J, PARK H, NOH S, TAE H H, SEONG P J, NOH S H

LED i.e. Zinc oxide-graphene hybrid-type white color LED using graphene quantum dot, has hole transporting layer formed on cathode, light emitting layer formed on hole transporting layer, and anode formed on electron transporting layer.

LEE H, SHIN Y H, HYUN D, PARK J, KIM K S

Preparation of graphene quantum dot used in e.g. light-emitting device, involves adding potassium peroxymonosulfate to carbon material by solvothermal redox reaction, sono-Fenton reaction or sonophoto-Fenton reaction of carbon material.

LEE H, SHIN Y H, HYUN D, PARK J, KIM K S

Formation of complex plating film used in electronic material, involves adding graphene-coated metal powder to plating solution, and forming plating film by performing electric plating in solution to which metal powder is added.

SUH S, SONG Y, PARK J, KIM T, SON H, SHIN J, LEE M, LEE J, LEE C, CHO Y, BAEG S, AHN B, YUN S

Composite used as electrochemically active material for forming electrode of lithium battery, field-emission device, biosensor, semiconductor device and thermoelectric device, comprises silicon dioxide in graphene matrix.

SON I, PARK J, CHANG J, KU J, LI X, CHOI J, SON I H, PARK J H, CHANG J J, KU J H, LI X S, CHOI J M