国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 PARK M（3）
公开年 2013（3）
申请年
专利权人 KOREA INST S.（2）

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacture of electrode for forming secondary battery, involves forming pores on graphene sheet by processing with hydrofluoric acid and forming graphene composite comprising sulfur particles by growing sulfur particles.

KIM Y, PARK M, YU J, KIM Y J, PARK M S, YU J S

Thermal conductive material for electronic packaging, is made of thermal conductive hollow particles chosen from carbon nanotube, graphene, graphite nanosheet, aluminum nitride, boron nitride and aluminum oxide, in polymer resin.

LEE S S, KIM J K, LIM S H, PARK M, KIM H, SU L S, GYEONG K J, HO I S, SUK K H