国家/地区 韩国（4） 中国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（4） B（2）
IPC大类 C01（4） C23（3）
IPC小类 C01B（4） C23C（3）
IPC C01B031/02（3） C23C016/26（3） C01B031/04（2）
发明人 PARK S（4）
公开年 2015（2）
申请年 2013（3） 
专利权人 LG ELECTRONICS INC（4）

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J