国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/19（2） C01B032/198（2）
发明人 REN W（5）
公开年 2017（3） 2018（2）
申请年 2017（5）
专利权人 INST METAL R.（3） SHANDONG HAI.（2）

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H

Preparation of graphene oxide nanoplatelets involves using flexible graphite coil, strip or carbon fiber wire as raw material and subjecting to electrochemical intercalation and electrolytic oxidation stripping using drive of feeding device.

PEI S, REN W, CHENG H, HUANG K

Preparing industrial graphene oxide involves mixing concentrated sulfuric acid with flake graphite, heating to react to obtain acidic mixture, cooling, then adding potassium permanganate and pure water to react, and adding hydrogen peroxide.

CAI Q, REN W, ZHANG Y, YU Y

Producing industrial graphene by oxidation-reduction process, comprises e.g. mixing concentrated sulfuric acid in flake graphite, heating, and reacting, to obtain acidic mixture, cooling acid mixture, and adding potassium permanganate.

CAI Q, REN W, ZHANG Y, YU Y