国家/地区 韩国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 RHO J（2）
公开年
申请年
专利权人 LG ELECTRONI.（2）

Photodiode comprises semiconductor substrate in photodetector device, insulating layer formed on semiconductor substrate, electrode formed on insulating layer, graphene on substrate, insulating layer, where insulating layer comprises gel.

SUNG J, RHO J, SUNG J W

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J